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ON Semiconductort NPN PNP
Complementary Silicon Power Transistors
These complementary silicon power transistors are designed for high-speed switching applications, such as switching regulators and high frequency inverters. The devices are also well-suited for drivers for high power switching circuits.
D44VH D45VH
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS 83 WATTS
* Fast Switching -- * Key Parameters Specified @ 100_C * Low Collector-Emitter Saturation Voltage -- *
VCE(sat) = 1.0 V (Max) @ 8.0 A Complementary Pairs Simplify Circuit Designs tf = 90 ns (Max)
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MAXIMUM RATINGS
Rating Symbol VCEO VCEV VEB IC ICM PD Value 80 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage 100 7.0 15 20 Collector Current -- Continuous -- Peak (1) Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 83 0.67 Watts W/_C _C TJ, Tstg -55 to 150
CASE 221A-09 TO-220AB
THERMAL CHARACTERISTICS
Characteristic
Symbol RJC RJA TL
Max 1.5
Unit
Thermal Resistance, Junction to Case
_C/W _C/W _C
Thermal Resistance, Junction to Ambient
62.5 275
Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds
(2) Pulse Width v 6.0 ms, Duty Cycle v 50%.
NOTE: All polarities are shown for NPN transistors. For PNP transistors, reverse polarities.
(c) Semiconductor Components Industries, LLC, 2001
1
March, 2001 - Rev. 2
Publication Order Number: D44VH/D
III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I III I I I I I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
(2) Pulse Test: Pulse Width v 300 s, Duty Cycle v 2%. SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (2) OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Fall Time
Storage Time
Rise Time
Delay Time
Output Capacitance (VCB = 10 Vdc, IC = 0, ftest = 1.0 MHz)
Current Gain Bandwidth Product (IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz)
Base-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.4 Adc) (IC = 8.0 Adc, IB = 0.8 Adc) (IC = 8.0 Adc, IB = 0.4 Adc, TC = 100_C) (IC = 8.0 Adc, IB = 0.8 Adc, TC = 100_C)
Collector-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.4 Adc) (IC = 8.0 Adc, IB = 0.8 Adc) (IC = 15 Adc, IB = 3.0 Adc, TC = 100_C)
DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc) (IC = 4.0 Adc, VCE = 1.0 Vdc)
Emitter Base Cutoff Current (VEB = 7.0 Vdc, IC = 0)
Collector-Emitter Cutoff Current (VCE = Rated VCEV, VBE(off) = 4.0 Vdc) (VCE = Rated VCEV, VBE(off) = 4.0 Vdc, TC = 100_C)
Collector-Emitter Sustaining Voltage (2) (IC = 25 mAdc, IB = 0)
Characteristic
(VCC = 20 Vdc, IC = 8.0 Adc, IB1 = IB2 = 0.8 Adc)
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D44VH D45VH
D44VH10 D45VH10 D44VH10 D45VH10
D44VH10 D45VH10 D44VH10 D45VH10
D44VH10 D45VH10
2 VCEO(sus) Symbol VCE(sat) VBE(sat) IEBO ICEV Cob hFE fT td ts tr tf Min 35 20 80 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ 120 275 50 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Max 10 100 700 250 1.2 1.0 1.1 1.5 0.4 1.0 0.8 1.5 50 10 -- -- -- -- -- -- 90 Adc Adc MHz Unit Vdc Vdc Vdc pF ns --
D44VH D45VH
PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA
-T- B
4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04
F T S
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A U K
H Z L V G D N R J
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D44VH D45VH
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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D44VH/D

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